unisonic technologies co., ltd 10N70Z power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2013 unisonic technologies co., ltd qw-r502-935, a 10 a , 700v n-channel power mosfet ? description the utc 10N70Z is a high voltage and high current power mosfet, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) =1.2 ? @v gs =10v * low gate charge ( typical 44 nc) * low crss ( typical 18 pf) * fast switching * 100% avalanche tested * improved dv/dt capability ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 10N70Zl-tf1-t 10N70Zg-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source
10N70Z power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-935,a ? absolute maximum ratings (t c = 25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage v gss 20 v avalanche current (note 2) i ar 10 a drain current continuous i d 10 a pulsed (note 2) i dm 40 a avalanche energy single pulsed (note 3) e as 250 mj repetitive (note 2) e ar 15.6 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation p d 50 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l = 14.2mh, i as = 10a, v dd = 50v, r g = 25 ? starting t j = 25c 4. i sd 9.5a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w junction to case jc 2.5 c/w
10N70Z power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-935,a ? electrical characteristics ( t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 700 v drain-source leakage current i dss v ds = 700v, v gs = 0v 10 a gate-source leakage current forward i gss v gs = 20 v, v ds = 0 v 5 a reverse v gs = -20 v, v ds = 0 v -5 a breakdown voltage temperature coefficient ? bv dss / ? t j i d = 250 a, referenced to 25c 0.7 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 5a 0.9 1.2 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0 mhz 1570 2040 pf output capacitance c oss 166 215 pf reverse transfer capacitance c rss 18 24 pf switching characteristics turn-on delay time t d ( on ) v ds =350v, i d =10a, r g =25 ? (note 1, 2) 23 55 ns turn-on rise time t r 69 150 ns turn-off delay time t d ( off ) 144 300 ns t f 90 165 ns total gate charge q g v ds =560v, i d =10a, v gs =10 v (note 1, 2) 44 57 nc gate-source charge q gs 6.7 nc gate-drain charge q gd 18.5 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0 v, i s =10a 1.4 v maximum continuous drain-source diode forward current i s 10 a maximum pulsed drain-source diode forward current i sm 40 a reverse recovery time t r r v gs = 0 v, i s = 10a, di f / dt = 100 a/s (note 1) 420 ns reverse recovery charge q rr 4.2 c notes: 1. pulse test : pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
10N70Z power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-935,a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
10N70Z power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-935,a ? test circuits and waveforms (cont.) switching test circuit switching waveforms gate charge test circuit gate charge waveform d.u.t. r d 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
10N70Z power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-935,a ? typical characteristics drain current vs. drain-source breakdown voltage drain current, i d (a) drain-source breakdown voltage, bv dss (v) 0 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 24 13 0 50 100 150 200 250 300 0 200 600 800 1000 400 0 50 100 150 200 250 300 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 0 012 34 v gs =10v, i d =5a 5 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) drain current, i d (a) 0.25 0.5 0.75 1 1.25 0 2 4 6 8 10 14 12 1 2 3 4 5 7 6 67 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
